Семинар – Characterization of III-Nitride films and nanowires grown by MEAglow (Migration Enhanced Afterglow) MOCVD

На 4 декември (четвъртък) 2014 г. от 11:00 часа в зала 300 на Института по
физика на твърдото тяло – БАН ще се състои семинар, на който

д-р Пенка Терзийска
Сътрудник на проекта ИНЕРА по 7РП

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Characterization of III-Nitride films and nanowires grown by
MEAglow (Migration Enhanced Afterglow) MOCVD

Experimental results on InN nanowires growth and characterization will be presented. Products are grown by MEAglow technique which is a low temperature migration enhanced chemical vapour deposition technique for growth of group III – Nitrides, where nitrogen plasma is used as a source of active nitrogen. Self-catalytic growth is demonstrated. The nanowires are about 2μm long and are terminated with In-metal droplet on top. Selective area growth of vertically oriented nanorods and an experimental evidence for the nucleation and the growth mechanism will also be presented. Results from X-Ray diffraction, SEM and TEM structural characterization will be presented.

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